发明名称 |
Increased damping of magnetization in magnetic materials |
摘要 |
In order to dampen magnetization changes in magnetic devices, such as magnetic tunnel junctions (MTJ) used in high speed Magnetic Random Access Memory (MRAM), a transition metal selected from the 4d transition metals and 5d transition metals is alloyed into the magnetic layer to be dampened. In a preferred form, a magnetic permalloy layer is alloyed with osmium (Os) in an atomic concentration of between 4% and 15% of the alloy.
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申请公布号 |
US2003029520(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20020195178 |
申请日期 |
2002.07.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
INGVARSSON SNORRI T.;KOCH ROGER H.;PARKIN STUART S.P.;XIAO GANG |
分类号 |
G11C11/15;H01F1/147;H01F10/14;H01F10/16;H01F10/32;(IPC1-7):H01F41/02 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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