发明名称 |
Superjunction device with improved avalanche capability and breakdown voltage |
摘要 |
A superjunction device has a plurality of equally spaced P columns in an N- epitaxial layer. The concentration of the P type columns is made greater than that needed for maintaining charge balance in the N- epi region and the P columns thereby to increase avalanche energy. An implant dose of 1.1E13 or greater is used to form the P columns.
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申请公布号 |
US2003030051(A1) |
申请公布日期 |
2003.02.13 |
申请号 |
US20010927027 |
申请日期 |
2001.08.09 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
ZHOU MING |
分类号 |
H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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