| 摘要 |
<p>A method of etching a ferroelectric layer comprises etching a ferroelectric layer using boron trichloride gas and at least one auxiliary gas selected from the group consisting of a carbon-containing gas and a nitrogen-containing gas. The carbon-containing gas may include CHF3 or C2H4. The nitrogen-containing gas may include N2 or NF3. The method reduces side etching of ferroelectric layers, and in particular, PZT-based ferroelectric layers and thereby improves electrical performance and reliability of devices made therefrom.</p> |
