| 摘要 |
<p>A crystal stacking substrate, crystal layer, and device, and their manufacturing method which are preferable for the application to the manufacture of various kind of semiconductor devices. This crystal stacking substrate is manufactured by forming air voids (4) in a stripe or lattice form on the surface of a base substrate (1) such as a sapphire substrate, and by overlaying it with a semiconductor layer (2) such as a gallium nitride semiconductor layer under a condition that these air voids (4) cause no stacking. A liquid such as ethanol is infiltrated into these air voids (4), and the semiconductor layer (2) is separated from the base substrate (1) under an expansion pressure based on the thermal expansion or phase transfer of the liquid. This semiconductor layer (2) is used as a semiconductor substrate. The manufacture of a crystal layer or a crystal element layer by using a crystal stacking substrate makes it much easier to manufacture a crystal substrate such as a semiconductor substrate or a device such as a semiconductor device.</p> |
