| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of correcting the defects of a photomask which is capable of precisely removing the residual defects below 500 nm without the damage on a quartz substrate and segments exclusive of the defects after the correction of the remaining defects formed on a mask and is capable of easily detecting even the end point of the correction and a scanning probe microscope used for the same. SOLUTION: In the method of correcting the residual defects generated on the photomask formed with light shielding film patterns on a translucent substrate or the phase shift mask formed with phase shifter patterns, the method of correcting the defect of the photomask comprising acquiring the three- dimensional images of the residual defects by using the scanning probe microscope to obtain the three-dimensional images of the residual defects, then removing the residual defects by scanning the surfaces of the residual defects by the probe of the scanning probe microscope after making the load value of the probe greater than that when the three-dimensional images are acquired and the scanning probe microscope used for the same are provided.</p> |
