| 发明名称 |
Semiconductor device with copper wiring connected to storage capacitor |
| 摘要 |
It is an object of the present invention to provide a high-reliability semiconductor device having a storage capacitor and wiring using copper for a main conductive film. Under the above object, the present invention provides a semiconductor device comprising: a semiconductor substrate; a storage capacitor formed on the main surface side of the semiconductor substrate and being a first electrode and a second electrode arranged so as to put a capacitor insulation film; a wiring conductor formed on the main surface side of the semiconductor substrate and including the copper (Cu) element; and a first film formed on the surface of the wiring conductor; wherein a material configuring the first film and a material configuring the first electrode and/or the second electrode include the same element.
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| 申请公布号 |
US2003030088(A1) |
申请公布日期 |
2003.02.13 |
| 申请号 |
US20020255714 |
申请日期 |
2002.09.27 |
| 申请人 |
KUMAGAI YUKIHIRO;MIURA HIDEO;OHTA HIROYUKI;IWASAKI TOMIO;ASANO ISAMU |
发明人 |
KUMAGAI YUKIHIRO;MIURA HIDEO;OHTA HIROYUKI;IWASAKI TOMIO;ASANO ISAMU |
| 分类号 |
H01L21/8247;H01L21/02;H01L21/3205;H01L21/768;H01L21/8242;H01L21/8246;H01L23/52;H01L23/532;H01L27/00;H01L27/10;H01L27/108;H01L27/115;H01L29/76;H01L29/788;H01L29/792;H01L29/94;H01L31/119;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8247 |
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