发明名称 METHOD FOR FORMING MULTILAYERED RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To form a transparent film by an easy method without damaging a first photoresist. SOLUTION: In the method for forming a multilayer resist pattern having two kinds of depth by successively forming a first photoresist 101, a transparent film 102 and a second photoresist 103 on a substrate 100, the transparent film 102 is formed by spraying a solution on the substrate where the first photoresist 101 is deposited and heated at a specified temperature.
申请公布号 JP2003043697(A) 申请公布日期 2003.02.13
申请号 JP20010232609 申请日期 2001.07.31
申请人 RICOH CO LTD 发明人 MASUZAWA MASAHIRO
分类号 G03F7/16;G03F7/20;G03F7/26;G11B7/26;H01L21/027 主分类号 G03F7/16
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