| 摘要 |
In a semiconductor device an electric field is controlled in direction or angle relative to a gate (101), or a channel to adjust a gain coefficient of a transistor. Preferably, there are provided a first gate (101) forming a channel region in a rectangle or a parallelogram, and a second gate (102) forming a channel region substantially containing a triangle between the channel region formed by the first gate and each of a source region (103) and a drain region (104). More preferably, there is included a channel region formed by the first gate that is sandwiched by the channel region formed by the second gate, all the channel regions together substantially forming a rectangle or a parallelogram. As such, a semiconductor device allowing a gain coefficient beta of an MOS transistor to be modulated by voltage in an analog manner can readily be produced by conventional processing technology and incorporated into any conventional LSIs configured by a CMOS circuit.
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