METHOD FOR FORMING THIN FILM IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a thin film in semiconductor devices is provided to easily obtain a nitride layer having high uniformity without generating damage of a semiconductor substrate by using CHF3 and Ar gas. CONSTITUTION: A stacked gate electrode including a gate oxide layer(32), a polysilicon layer(34), a metal film(36) and a nitride layer(38) is formed on a substrate(30). An oxide layer(40) and a nitride layer(42) as a spacer are sequentially deposited on the resultant structure. After loading the resultant structure into an etch chamber in MERIE(Magnetic Enhanced Reactive Ion Etching) equipment, the nitride layer(42) and the oxide layer(40) are selectively etched at low pressure atmosphere of 10-50 mT by supplying CHF3 and Ar gas.