发明名称 METHOD FOR CLEANING SEMICONDUCTOR DEVICE USING LASER
摘要 PURPOSE: A method for cleaning a semiconductor device using laser is provided to reduce a time for cleaning process by minimizing the scanning number of a semiconductor substrate. CONSTITUTION: A semiconductor substrate(104) is transferred into a cleaning chamber(100). The semiconductor substrate(104) is loaded by a rotation and transfer unit(102). A laser beam irradiation device(106) irradiates a line laser beam(110) on a surface of the semiconductor substrate(104) through a laser beam irradiation hole(108). The energy of the line laser beam(110) is controlled according to thermal characteristics of elements formed on the semiconductor substrate(104). In a cleaning process, particles are separated from the semiconductor substrate(104). An adhesion of the particles on the semiconductor substrate(104) is prevented by using a purge gas(112). The gas generated from the cleaning chamber is exhausted to an exhaust hole(114).
申请公布号 KR20030012364(A) 申请公布日期 2003.02.12
申请号 KR20010046361 申请日期 2001.07.31
申请人 HANTECH CO., LTD. 发明人 KIM, DAE JIN;KIM, HYEON JUNG;KIM, YONG GI;RYU, JE GIL
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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