| 摘要 |
PURPOSE: A method for manufacturing a capacitor in a semiconductor device is provided to improve capacitance of the capacitor by increasing the surface area of a storage node electrode. CONSTITUTION: The first polysilicon layer(106) is formed on an interlayer dielectric(102) having a contact plug(104). A plurality of nitride and oxide layers are sequentially and repeatedly stacked on the first polysilicon layer(106). A storage node hole is formed to expose the first polysilicon layer(106) by sequentially patterning the nitride layers and the oxide layers. A nitride layer is filled into the storage node hole. After patterning both sides of the storage node hole to expose the first polysilicon layer(106), the oxide layers are removed. The second polysilicon layer(120) as a storage node electrode is formed on the resultant structure. After exposing the nitride layer, the plurality of nitride layers are removed. Then, an HSG(Hemispherical Silicon Grain)(122) are formed on the second polysilicon layer(120).
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