| 摘要 |
PURPOSE: To manufacture a mask of higher accuracy by correcting the global size fluctuations which occur generally during mask manufacture. CONSTITUTION: The method of manufacturing the mask for manufacturing the mask subjected to pattern exposure in accordance with design patterns comprises previously investigating the correlation between the position on the mask and the size fluctuations when using the device group (electron beam exposure device, developing device and etching device) to be used for manufacture of the mask and the correlation between the characteristics of the patterns and the size fluctuations and uniformly correcting the dimensions of the designed patterns by each of small regions where the size fluctuations attain a permissible range by utilizing the data of the respective correlation in fabricating the mask by using the device group, thereby forming the desired patterns on the mask in accordance with the corrected pattern dimensions. |
