| 摘要 |
PURPOSE: A method for forming a metal wiring using a semiconductor oxide void is provided to improve contact resistance between a metal line and a plate electrode when forming a contact hole. CONSTITUTION: The first oxide layer(32) and a conductive layer are sequentially formed on a substrate having a lower metal line(30). After forming a plate electrode(35) by selectively etching the conductive layer, the second oxide layer(38) having bad step-coverage is formed on the resultant structure. At this time, a void(40) is simultaneously formed in the second oxide layer(38). After planarizing the second oxide layer, the first contact hole(44) is formed to expose the lower metal line(30) by selectively etching the second and first oxide layer(38,32). The second contact hole is formed between the plate electrodes(35) by cleaning the void(40). Then, an upper metal line is formed in the first and second contact hole.
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