METHOD FOR FORMING INSULATING LAYER IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an insulating layer in a semiconductor device is provided to be capable of preventing dishing phenomenon by performing high density plasma processing. CONSTITUTION: The first insulating pattern(22) made of nitride is formed on a semiconductor substrate(20). A trench isolation region is formed by etching the exposed substrate(20). The second insulating layer(24) is then formed in the trench isolation region. By performing O2 plasma treatment into the surface of the second insulating layer(24), a plasma treated region(26) having densified oxide components is formed. Then, the second insulating layer(24) is planarized by CMP(Chemical Mechanical Polishing).