SINGLE-SOURCE PRECURSORS FOR 13 GROUP-NITRIDE QUANTUM DOT, PROCESS FOR PREPARING THEM AND PROCESS FOR PREPARING 13 GROUP-NITRIDE QUANTUM DOT EMPLOYING THE SAME

摘要

PURPOSE: Provided are single-source precursors for 13 group-nitride quantum dot, a process for preparing them and a process for preparing 13 group-nitride quantum dot employing them. Therefore, nitride quantum dot is produced at low temperature more massively than prior methods by chemically manufacture 13 group-nitride quantum dot in a solution. CONSTITUTION: The single-source precursor for 13 group-nitride quantum dot is represented by the formula(I):(SiR¬1R¬2R¬3)2N(N3)2M←D, wherein R¬1, R¬2, and R¬3 are C1-C3 alkyl groups, M is a 13 group element, and D is organic salt. It is manufactured by the steps of: the reaction of 13 group-chloride compound with an organic salt to obtain a compound of the formula(II); the reaction the compound of the formula(II) with Li(N(SiR¬1R¬2R¬3)2) to obtain a compound of the formula(III) and the reaction of the compound of the formula(III) with sodium azide to obtain a compound of the formula(I).