发明名称 CRUCIBLE SUSCEPTOR FROM HIGH PURITY COMPOSITE FOR CRYSTAL GROWING PROCESS
摘要 <p>A Czochralski process furnace component comprises a high purity, semiconductor standard composite including a carbon fiber reinforced carbon matrix having a total level of metal impurity below about 10 ppm, preferably below about 5 ppm, and most preferably having a level of metal impurity below the detection limit of inductively coupled plasma spectroscopy for the metals Ag, Al, Ba, Be, Ca, Cd, Co, Cr, Cu, K, Mg, Mn, Mo, Na, Ni, P, Pb, Sr and Zn. A crucible susceptor for a crystal growing process for pulling a crystal ingot from a crystal material melt in a crucible comprises a high purity composite comprising a two dimensional, continuously woven carbon fiber fabric reinforced carbon matrix; the high purity composite having a total level of metal impurity less than about 10 parts per million; the crucible susceptor being a one piece, ply lay-up structure of said high purity composite, having a side ring and a base, said side ring and said base having substantially the same thickness.</p>
申请公布号 IL132591(A) 申请公布日期 2003.02.12
申请号 IL19980132591 申请日期 1998.05.08
申请人 HITCO CARBON COMPOSITES, INC. 发明人
分类号 B32B9/00;C04B35/83;C30B15/00;C30B15/10;C30B15/14;C30B35/00;D01F11/12;(IPC1-7):C30B15/00 主分类号 B32B9/00
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