NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A non-volatile memory device and a method for fabricating the same are provided to reduce leakage of charges by forming a charge storage layer with a material having an energy band gap narrower than the energy band gap of an existing non-volatile memory device. CONSTITUTION: An isolation layer(110) is formed on a semiconductor substrate(100) in order to define an active region. A lower insulating layer, an intermediate insulating layer, an upper insulating layer, and a lower conductive layer are formed on the active region. A gate conductive layer is formed on the entire surface of the semiconductor substrate(100). A gate electrode(114) is formed by patterning the gate conductive layer, the lower conductive layer, the upper insulating layer, and the intermediate insulating layer. The gate electrode(114) is formed with a lower electrode(108a) and an upper electrode(112). A tunnel oxide layer(102), a charge storage layer(104a), and a blocking insulating layer(106a) are inserted between the active region and the gate electrode(114). An impurity diffusion layer(116) is formed by injecting impurity into the active region of both sides of the gate electrode(114).