发明名称 APPARATUS FOR ETCHING WAFER
摘要 PURPOSE: An apparatus for etching a wafer is provided to restrain the inflow of external air into a reaction chamber and generation of particles by forming a fixing type uniformity ring. CONSTITUTION: A distribution plate(20) is used for injecting a reaction gas into the inside of a process chamber(10). An electrostatic chuck(30) is used for chucking a wafer. A uniformity ring(40) is installed on an upper portion of the electrostatic chuck(30). A guide portion(41) of the uniformity ring(40) is projected from an upper portion of the uniformity ring(40). A support portion(42) of the uniformity ring(40) is fixed to the process chamber(10) by using a pin(70). The support portion(42) is loaded on upper end portions of an edge ring(50) and a ground ring(60). The height of an upper end portion of the guide portion(41) is lower than that of a bottom face of a blade of a transferring robot.
申请公布号 KR20030012478(A) 申请公布日期 2003.02.12
申请号 KR20010046507 申请日期 2001.08.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JONG MAN
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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