INTERCONNECT STRUCTURE WITH A LOW PERMITTIVITY DIELECTRIC LAYER

摘要

A method of making a semiconductor device includes forming a low permittivity dielectric layer over one or more conductive lines of a semiconductor device. The dielectric layer is made using a silicon-containing material having a relatively low permittivity including, for example, silicon oxyfluoride (SiOyFx) and hydrogen silsesquioxane (HSQ). An optional oxide layer may be formed over the dielectric layer. At least a portion of the dielectric layer and/or the optional oxide layer is subsequently removed to form a planar dielectric layer having a contaminated surface layer. The contaminated surface layer is due to exposure to water and is removed by, for example, exposing the surface to an acid, such as hydrofluoric acid.