| 摘要 |
PURPOSE: An apparatus for stripping photoresist is provided to remove fully the photoresist from the surface of a wafer by sensing an etch ratio of the photoresist in an etch process in a vacuum chamber. CONSTITUTION: A wafer(6) is located at a vacuum chamber(10). A polysilicon layer is formed on the surface of the wafer(6). A photoresist pattern is formed on the polysilicon layer of the wafer(6). The wafer(6) is connected with an RF power source(2) of the vacuum chamber(10). The wafer(6) is located on a cathode(4) for supplying RF power. A top lead(1) connected with ground potential is located at a position facing the wafer(6). A gas distribution hole(8') is formed on a gas distribution plate(8) in order to supply uniformly an etching gas to the wafer(6). An EPD(End Point Detection) window is inserted into an insertion hole formed on a wall of the vacuum chamber(10). An EPD portion(20) is installed at one end portion of the EPD window. The EPD portion(20) is formed with a sensor portion(22), an optical cable(24), a controller(26), and a monitor(28).
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