| 摘要 |
PURPOSE: A semiconductor memory is provided to have both large capacity of a DRAM and usability of an SRAM as well as promptly to respond to a request for read operation from the exterior of the memory. CONSTITUTION: A semiconductor memory includes nine data input/output terminals(DQ0 to DQ8). According to the present invention, nine memory blocks(BLKDQ0 to BLKDQ8) and a memory block BLKP for storing a parity bit of 9-bit write data(DQ0 to DQ8) are formed corresponding to the data input/output terminals(DQ0 to DQ8), respectively. Namely, the write data(DQ0 to DQ8) and the parity bit constitute one code word. One refresh operation is performed in any of the memory blocks (BLKDQ0 to BLKDQ8 and BLKP). The read operation cannot be performed due to the refresh operation in only one memory block, out of one code word. Therefore, the read data of the memory block performing the refresh operation is easily reproduced only by the memory blocks except for the memory block performing the refresh operation.
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