发明名称 APPARATUS FOR FABRICATING THIN FILM
摘要 PURPOSE: An apparatus for fabricating thin film is provided to solve conventional problems of a bad effect on reaction stability and uniformity deterioration of sputtering rate and thin film composition by manufacturing a compound thin film as preventing mixing of reaction gas with sputtering gas. CONSTITUTION: The apparatus for fabricating thin film comprises a process chamber(100) which is divided into three parts of reaction chamber(114), pumping chamber(112) and sputtering chamber(110) from the left side by vertical partitions(100a), and in which penetration holes are formed on the vertical partitions so that the three parts are actually connected; a reaction gas injection port(114a) that is installed on the reaction chamber to inject a reaction gas into the reaction chamber; a sputtering gas injection port(111a) that is installed on the sputtering chamber to inject a sputtering gas into the sputtering chamber; a gas outlet(112a) that is formed on the pumping chamber to exhaust gases in the reaction chamber and the sputtering chamber to the outside; a substrate support(120) which is installed in the sputtering chamber to support a substrate(122) in such a way that the substrate support is reciprocated side to side from the sputtering chamber to the reaction chamber through the pumping chamber; and a sputtering target support(130) that is installed in the sputtering chamber to support a sputtering target(132), wherein the sputtering target is a metallic target, and the substrate support and the sputtering target support are installed in the sputtering chamber in such a way that they are vertically oppositely directed to each other.
申请公布号 KR20030012350(A) 申请公布日期 2003.02.12
申请号 KR20010046343 申请日期 2001.07.31
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 JUNG, GUK CHAE;LEE, BYEONG SU;YUM, DO JUN
分类号 C23C14/34;(IPC1-7):C23C14/34 主分类号 C23C14/34
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