发明名称 METHOD FOR USING AIR COOLING DRY ETCH APPARATUS
摘要 PURPOSE: A method for using an air cooling dry etch apparatus is provided to maximize a natural cooling effect by setting up temperature of an upper part of a dry etch apparatus as 70 to 90 degrees centigrade. CONSTITUTION: An upper electrode(102) is installed at an upper portion of an air-cooling dry etch apparatus(100). A heating pad(104) is formed in the upper electrode(102). The heating pad(104) is used for heating the upper electrode(102) to approach a predetermined temperature of the air cooling dry etch apparatus(100). A gas injection pipe(106) is installed at a center portion of the upper electrode(102). An etching gas is provided though the gas injection pipe(106). An air injection pipe is installed at the upper electrode(102) in order to perform a cooling process. The air and nitrogen gas are injected to the upper electrode(102) through the air injection pipe. A wafer(W) is loaded on a chuck(110). A lower electrode(108) is formed at a lower portion of the chuck(110).
申请公布号 KR20030012732(A) 申请公布日期 2003.02.12
申请号 KR20010047144 申请日期 2001.08.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SHIN, JAE SEONG
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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