发明名称 |
METHOD FOR USING AIR COOLING DRY ETCH APPARATUS |
摘要 |
PURPOSE: A method for using an air cooling dry etch apparatus is provided to maximize a natural cooling effect by setting up temperature of an upper part of a dry etch apparatus as 70 to 90 degrees centigrade. CONSTITUTION: An upper electrode(102) is installed at an upper portion of an air-cooling dry etch apparatus(100). A heating pad(104) is formed in the upper electrode(102). The heating pad(104) is used for heating the upper electrode(102) to approach a predetermined temperature of the air cooling dry etch apparatus(100). A gas injection pipe(106) is installed at a center portion of the upper electrode(102). An etching gas is provided though the gas injection pipe(106). An air injection pipe is installed at the upper electrode(102) in order to perform a cooling process. The air and nitrogen gas are injected to the upper electrode(102) through the air injection pipe. A wafer(W) is loaded on a chuck(110). A lower electrode(108) is formed at a lower portion of the chuck(110).
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申请公布号 |
KR20030012732(A) |
申请公布日期 |
2003.02.12 |
申请号 |
KR20010047144 |
申请日期 |
2001.08.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN, JAE SEONG |
分类号 |
H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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