| 摘要 |
PURPOSE: A method for forming a storage node contact plug in a semiconductor device is provided to reduce contact resistance between a storage node contact plug and a contact pad by using a BPSG(BoroPhospho Silicate Glass) layer as the contact pad. CONSTITUTION: The first BPSG layer(106) having the first contact pad(108) is formed on a semiconductor substrate(100). After depositing the second BPSG layer(110) on the first BPSG layer(106), the second contact pad(112) is formed to connect the first contact pad by selectively etching the second BPSG layer. After forming an HDP(High Density Plasma) layer(118) on the resultant structure, a storage node contact hole is formed to expose the second contact pad by selectively etching the HDP layer(118). A contact plug(120) is formed by filling a conductive layer into the storage node contact hole and polishing the conductive layer.
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