| 摘要 |
PURPOSE: To provide a semiconductor memory in which binary data can be stored dynamically using a small number of signal lines by employing a simple transistor structure as a memory cell. CONSTITUTION: An MISFET is formed using a p-type silicon layer 13 formed on a silicon substrate 11 while being isolated by an insulating film 12 as a floating channel body. The MISFET comprises a main gate 15 formed on the surface of the channel body in order to form a channel, and an auxiliary gate of an n¬+ type layer 18 being coupled capacitively with the rear surface through the insulating film 12. The MISFET is a perfect depletion type and dynamically stores a first data state where a large number of carriers are stored on the rear surface of the channel body 13 and a second data state where a large number of carriers are discharged to the rear surface of the channel body 13 with reference to a state where the channel body 13 is depleted perfectly by an electric field from the main gate 15 and a large number of carriers can be stored on the rear surface of the channel body 13 by an electric field from the auxiliary gate 18.
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