| 摘要 |
A semiconductor device comprising a plurality of first transistors formed in a first region of a semiconductor substrate and a plurality of second transistors formed in a second region of the semiconductor substrate, wherein each of the first and second transistors has a gate electrode, a channel-forming region and source/drain regions; the gate electrodes constituting the first and second transistors are formed of a polysilicon layer containing an impurity and a silicide layer formed thereon; a silicide layer is formed in the source/drain regions constituting the first transistor; and no silicide layer is formed in the source/drain regions constituting the second transistor.
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