| 摘要 |
PURPOSE: A method for manufacturing a solid state memory device is provided to form a level of the device, identify defective areas in the level, and program an address logic of the level to avoid the defective areas in the level. CONSTITUTION: A level of a device is formed(302). Defective areas are identified in the level(304). An address logic of the level is programmed to avoid the defective areas in the level(306). At least one additional level of the device is formed(308,302). The address logic of each additional level is programmed to avoid defects. The address logic is programmed by identifying the lines associated with defective areas in the level and increasing the density of current flowing through the identified lines until links in the identified lines are opened. The current density is increased by irradiating the links.
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