发明名称 |
Method for forming localized halo implant regions |
摘要 |
A method for forming a localized halo implant region, comprises: implanting a first dosage of ions of a first type toward a surface of a substrate having a gate electrode formed thereon, so as to form a lightly doped region adjacent to the gate electrode; forming a disposable spacer on a sidewall of the gate electrode; forming an elevated source/drain structure adjacent to the disposable spacer; implanting a second dosage of ions of the first type toward the surface of the substrate so as to form a heavily doped region adjacent to the disposable spacer; removing the disposable spacer; and tilt-angle implanting at least one dosage of ions of a second type toward a gap created by the disposable spacer having been removed so as to form a localized halo implant region in the substrate, preferably by utilizing shadow effects of the gate electrode and the elevated source/drain structure.
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申请公布号 |
US6518135(B1) |
申请公布日期 |
2003.02.11 |
申请号 |
US20010961484 |
申请日期 |
2001.09.24 |
申请人 |
INTEGRATED DEVICE TECHNOLOGY, INC. |
发明人 |
AHN JAE-GYUNG |
分类号 |
H01L21/265;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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