发明名称 |
Copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio |
摘要 |
A novel copolymer includes a repeating unit (A) represented by, for example, Formula (I) below, and a repeating unit (B) derived from an unsaturated carboxylic anhydride. The novel copolymer is suitable for the preparation of a photoresist composition that has satisfactory transparency, high sensitivity and definition and exhibits satisfactory DOF properties in the field of photolithography using a deep UV light source. By the use of the photoresist composition, a process forms a resist pattern with a high aspect ratio.
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申请公布号 |
US6517993(B2) |
申请公布日期 |
2003.02.11 |
申请号 |
US20010901646 |
申请日期 |
2001.07.11 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
NAKAMURA TSUYOSHI;IKEGAWA TAEKO;SAWANO ATSUSHI;DOI KOUSUKE;KOHARA HIDEKATSU |
分类号 |
C08F220/18;C08F222/04;C08F222/06;C08F230/08;C08G81/02;C08K5/00;C08K5/103;C08K5/41;C08L33/06;G03F7/038;G03F7/039;G03F7/075;G03F7/40;H01L21/027;(IPC1-7):G03F7/004 |
主分类号 |
C08F220/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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