| 摘要 |
An improved process for cleaning a semiconductor wafer surface during manufacture to remove metallic contaminants without the use of robotics and without risk of scanning droplets falling from the wafer, in a faster time than with a manual process using a vacuum wand, comprising:a) positioning a wafer on a rotating plate pivotably mounted above a platform;b) contacting the wafer with a metals scanning solution droplet from the tip of a drop probe, the solution being adhered in a bottom portion of the drop probe above the wafer in a material of a surface tension sufficiently higher than the surface tension on the wafer, the drop probe being pivotably connected to a pivot arm which upon pivoting or turning one notch enables droplet sweeping of metal contaminants on a concentric circle on the wafer on the rotating plate;c) successively turning the pivot arm a sufficient number of notches to enable completion of wafer droplet sweepings through concentric circles to reach the edge of the wafer until all of the surface of the wafer is swept; andd) pipetting the solution droplet containing metal contaminants out of the probe for analysis.
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