发明名称 |
Using refractory metal silicidation phase transition temperature points to control and/or calibrate RTP low temperature operation |
摘要 |
A method for controlling and/or calibrating rapid thermal process systems is described. One or more wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon are silicided in a RTP system at different temperatures. Sheet resistance uniformity of the wafer is measured thereby detecting silicidation phase transition temperature points at the highest uniformity points. The temperature points are used to calibrate or to reset the RTP system. A plurality of wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon can be silicided in each of a plurality of rapid thermal process systems. Sheet resistance uniformity of each of the wafers is measured thereby detecting silicidation phase transition temperature points by highest sheet resistance uniformity for each of the RTP systems. The temperature points are used to match temperatures for each of the RTP systems. The temperature point depend upon the type of refractory metal used and can range from about 200 to 800 ° C.
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申请公布号 |
US6517235(B2) |
申请公布日期 |
2003.02.11 |
申请号 |
US20010867560 |
申请日期 |
2001.05.31 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD.;LUCENT TECHNOLOGIES INC |
发明人 |
ZHU ZHONG YUN;JAISWAL RAJNEESH;KARIM HAZNITA ABD;ZHANG BEI CHAO;CHAM JOHNNY;YELAMANCHI RAVI SANKAR;LEONG CHEE KONG |
分类号 |
H01L21/26;G01K15/00;(IPC1-7):G01K17/00;H01L21/477 |
主分类号 |
H01L21/26 |
代理机构 |
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