| 摘要 |
A semiconductor device is formed by a compound film alphagammax made of at least one element alpha selected from metal elements and at least one element gamma selected from the group consisting of boron, carbon, and nitrogen on a base layer containing oxygen (O), and forming a compound film alphagammayOz by causing the compound film alphagammax to reduce the base layer and thereby oxidizing the compound film alphagammax on an interface of the compound film alphagammax and the base layer, wherein each of x and y is a ratio of the number of atoms of the element gamma to the number of atoms of the element alpha, and z is a ratio of the number of atoms of the oxygen to the number of atoms of the element alpha.
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