发明名称 |
Process for forming a film on a substrate having a field emitter |
摘要 |
A process for forming a film on a substrate having a field emitter is disclosed. The substrate and field emitter are cleaned by hydrogen plasma to remove the impurities. Next, a silicon carbide film is selectively formed over said field emitter. A negative bias voltage of about 150 V to about 300 V is applied to substrate for increasing the nucleation sites of said silicon carbide film. Afterward, the negative bias voltage is stopped so as to grow a carbon-containing film from said silicon carbide film.
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申请公布号 |
US6517405(B1) |
申请公布日期 |
2003.02.11 |
申请号 |
US20000482504 |
申请日期 |
2000.01.13 |
申请人 |
NATIONAL SCIENCE COUNCIL |
发明人 |
CHENG HUANG-CHUNG;TARNTAIR FU GOW;HONG WEI KAI |
分类号 |
H01J9/02;(IPC1-7):H01J9/02 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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