发明名称 |
Memory cell configuration with capacitor on opposite surface of substrate and method for fabricating the same |
摘要 |
A MOS transistor of a memory cell and a bit line connected thereto are disposed on a first surface of a substrate. A capacitor of the memory cell is disposed on a second surface of the substrate, the second surface being opposite to the first surface. A contact is disposed in the substrate and connects the capacitor to the MOS transistor.
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申请公布号 |
US6518613(B2) |
申请公布日期 |
2003.02.11 |
申请号 |
US20010968304 |
申请日期 |
2001.10.01 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
WILLER JOSEF;REISINGER HANS;SCHLOSSER TILL;STENGL REINHARD |
分类号 |
H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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