| 摘要 |
One embodiment of the present invention is a multiple seed layer structure for making metallic interconnect including: (a) a patterned insulating layer on a substrate, the patterned insulating layer including at least one opening and a field surrounding the at least one opening; (b) a barrier layer disposed over the field and inside surfaces of the at least one opening; (c) a first seed layer disposed over the barrier layer using a first deposition technique; (d) a second seed layer disposed over the first seed layer using a second deposition technique, the first and second deposition techniques being different, one producing a substantially conformal seed layer and the other producing a substantially non-conformal seed layer; and (e) an electroplated metallic layer disposed over the second seed layer, the electroplated metallic layer including a material selected from a group consisting of Cu, Ag, or alloys including one or more of these metals.
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