| 摘要 |
In a parallel circuit (10) comprising a plurality of high-power IGBTs (T1, . . . ,T3) which are each driven by a dedicated gate drive circuit (GD1,. . . ,GD3), each of the gate drive circuits (GD1,. . . ,GD3) having, at its output, a p-channel MOSFET (M1, M3, M5) and an n-channel MOSFET (M2, M4, M6) in a push-pull arrangement and the outputs of the gate drive circuits (GD1, . . . ,GD3) being connected to the gates of the IGBTs (T1,. . . ,T3) in each case via a gate resistor (R1,. . . ,R3), a parallel circuit comprising more than two gate drive circuits is made possible by virtue of the fact that the outputs of the gate drive circuits (GD1,. . . ,GD3) are interconnected via a connecting line (11), and that the MOSFETs (M1,. . . ,M6) of the gate drive circuits (GD1,. . . ,GD3) are in each case connected to a positive or negative supply terminal (P1, . . . ,P3 or N1, . . . ,N3) via a constant-current source (CS1,. . . ,CS6).
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