| 摘要 |
A structure of III-nitride light emitting diode (LED) having spiral electrodes and a manufacturing method thereof. The present invention uses an etching or polishing method to form a spiral-shaped trench in the surface of the epitaxial structure of LED, so that two metal electrodes having opposite electrical properties, formed in following steps, have the spiral-shaped pattern structures in parallel. The structure of III-nitride LED having spiral electrodes formed by the method of the present invention can evenly distribute the injected current between two electrodes having opposite electrical properties, thereby having the advantages of good current-spreading efficiency and the uniform light-emitting area. In addition, the photon ejected to the surface of diode produced with a large angle can be extracted from the side of the trench that is exposed by etching spiral-shaped pattern, so that the extraction efficiency of photon is increased.
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