发明名称 Photodiode
摘要 A photodiode (A) comprises a substrate, a light receiving layer having a band gap wavelength and including a pn-junction and at least an absorption layer having a band gap wavelength lambdg. One of the absorption layers is sandwiched between the substrate and the light receiving layer, the band gap wavelength lambdg of the absorption layer is shorter than the receiving signal wavelength lambd2 but longer than noise wavelength lambd1(lambd1<lambdg<lambd2). Otherwise a photodiode (B) has two absorption layers epitaxially made on the substrate. One absorption layer is formed on the top surface of the substrate. The other absorption layer is formed on the bottom surface of the substrate. The absorption layers annihilate the noise lambd1. The PD has no sensitivity to lambd1.
申请公布号 US6518638(B1) 申请公布日期 2003.02.11
申请号 US20000566982 申请日期 2000.05.09
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 KUHARA YOSHIKI;YAMABAYASHI NAOYUKI;IGUCHI YASUHIRO
分类号 G02B6/12;G02B6/42;H01L31/0216;H01L31/0232;H01L31/0352;H01L31/103;(IPC1-7):H01L31/00 主分类号 G02B6/12
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