发明名称 |
Silicon structure, method for producing the same, and solar battery using the silicon structure |
摘要 |
A silicon structure having little solar light beam reflection, which is suitable for a solar battery. On the entire surface of a quartz substrate, Mo is deposited at a thickness of approximately 51 mum to form a lower electrode. On the entire surface of the lower electrode, a p type silicon structure having a thickness of 30 to 40 mum comprising an aggregate of a plurality of columnar silicon members mainly comprising silicon and having random orientations is formed via a film mainly comprising silicon, using Si2Cl6 mixed with BCl3. On the surface of the p type silicon structure, P is diffused by a thermal diffusion method using POCl3 to form an n type region at the periphery of the columnar silicon members. On the entire surface of the p type silicon structure, a transparent electrode comprising indium-tin oxide having a thickness of 30 to 40 mum is formed, and an upper electrode comprising Al having a thickness of approximately 1 mum is formed on the transparent electrode.
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申请公布号 |
US6518494(B1) |
申请公布日期 |
2003.02.11 |
申请号 |
US19960701292 |
申请日期 |
1996.08.22 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SHIBUYA MUNEHIRO;KITAGAWA MASATOSHI;MUKAI YUUJI;YOSHIDA AKIHISA |
分类号 |
H01L31/0236;H01L31/052;(IPC1-7):H01L31/00;H01L29/30;H01L31/06 |
主分类号 |
H01L31/0236 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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