| 摘要 |
Infrared ray sensor and method for fabricating the same, the method including the steps of (a) forming a diaphragm on a substrate, (b) forming and patterning a semiconductor film on the diaphragm to form a first thermoelectric material film, and forming and patterning a conductor film on the diaphragm, to form a metal resistance layer in a region of the first thermoelectric material film and a second thermoelectric material film in a region of the diaphragm, (c) forming a protection film on an entire surface inclusive of the metal resistance layer, (d) forming a black body on the protection film, and (e) removing a back side portion of the substrate, to expose the diaphragm, whereby maintaining a high sensitivity, requiring no additional process, reducing Jhonson noise, and improving yield.
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