发明名称 |
Method for manufacturing and structure of semiconductor device with dielectric diffusion source and CMOS integration |
摘要 |
A method for manufacturing a semiconductor device includes forming a collector region of a semiconductor substrate and forming an isolation structure adjacent at least a portion of the collector region. The method also includes forming a gate stack layer adjacent at least a portion of the isolation structure and forming a base region of the semiconductor substrate adjacent at least a portion of the collector region. The base region comprises a base link up region proximate a lateral edge of the base region. A diffusion source layer is formed adjacent at least a portion of the base link up region. The method includes removing a portion of the gate stack layer to form a base electrode adjacent a portion of the base region and a gate electrode spaced apart from the base electrode. The gate electrode is located at a complementary metal oxide semiconductor (CMOS) area of the semiconductor device.
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申请公布号 |
US6518111(B1) |
申请公布日期 |
2003.02.11 |
申请号 |
US20010029560 |
申请日期 |
2001.12.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JOHNSON FRANK S. |
分类号 |
H01L21/225;H01L21/331;H01L21/8249;H01L29/08;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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