| 摘要 |
PURPOSE: An high frequency semiconductor device and a method for fabricating the same are provided to integrate efficiently a passive device including an inductor by considering compatibility with a CMOS process. CONSTITUTION: N type impurities are implanted and diffused into an N well region and a P well region defined on a P type substrate(S10). An electrode material is deposited on a back face of a substrate to form porous silicon(S20). A porous silicon layer is formed by etching the electrode material(S30). P type impurities are implanted and diffused into a P well region(S40). A source, a drain, and a gate are formed by a lithography process, an etch process, and an ion implantation process(S45). The first insulating layer, the first via hole, the first plug, and the first pad are formed(S50). The second insulating layer, the second via hole, the second plug, the second pad, and the first inductor layer are formed(S60). The third insulating layer, the third via hole, the third plug, the third pad, and the second inductor layer are formed(S70).
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