发明名称 Dual AP pinned GMR head with offset layer
摘要 A dual spin valve magnetoresistive structure having a free layer and a spacer layer between the free layer and a pinned layer. The pinned layer is between the spacer layer and the antiferromagnetic layer. There is also an offset layer, where the antiferromagnetic layer is between the offset layer and the pinned layer. The offset layer is tailored to introduce a first magnetic field that reduces a net magnetic field within said free layer.
申请公布号 US6519117(B1) 申请公布日期 2003.02.11
申请号 US19990454827 申请日期 1999.12.06
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GILL HARDAYAL SINGH
分类号 G01R33/09;G11B5/012;G11B5/39;(IPC1-7):G11B5/39 主分类号 G01R33/09
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