Method of making TFT-based pixel structure

摘要

A reflected light from the edge of a back shield film 3 and an incident light from the edge of a black matrix are blocked by forming a dummy contact hole 7 not reaching the back shield film 3 at least in the interlayer film 4 on the back shield film near the lateral face of the thin film transistor along the longitudinal direction of the channel within the region delimited by the back shield film 3 and the black matrix 12, and forming a film made of at least an interconnection material on the side wall of the dummy contact hole.