METHOD FOR CLEANING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for cleaning a semiconductor device is provided to be capable of completely removing the residuals existing in a silicon substrate by using fine oxygen bubbles of hot deionized water. CONSTITUTION: The first cleaning process is carried out for cleaning the surface of a silicon substrate(10) by using a mixed solution of H2SO4 and H2O2. Then, the second cleaning process is carried out for removing the residuals existing in the surface of the silicon substrate by using fine oxygen bubbles(22) contained in hot deionized water for 5-7 minutes. Preferably, the first cleaning process can be carried out by using an H3PO4 solution. Preferably, the fine oxygen bubble is formed by heating the deionized water in the range of 70-90 °C. Preferably, the deionized water contains dissolved oxygen of 25-40 ppb.