| 摘要 |
An etching method for semiconductor comprises: etching a III-V group compound semiconductor using an etching gas including V group material forming said III-V group compound semiconductor layer and keeping said III-V group compound semiconductor layer at a temperature higher than the temperature of the crystal growth temperature of said III-V group compound semiconductor. Therefore, an etching method that can perform an etching having higher controllability than the wet etching is provided. In addition, because no etching solution is employed, an etching method that can be employed in a crystal growth apparatus can be provided. Further, because material gas of a III-V group compound semiconductor layer is employed as an etching gas, residual of impurities other than the material of the III-V group compound semiconductor layer at the etched surface can be prevented, thereby keeping the etched surface cleanly. <IMAGE> <IMAGE> |
