| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to make an exposure light source reach a portion under a photoresist layer without lessening the intensity of the exposure light source by forming the photoresist layer made of a monomolecular layer. CONSTITUTION: A thin film is formed by a Langmuir-Blogett or Langmuir-Shafter method using polymer with photosensitive radical. A selective exposure process is performed on the thin film. The exposed thin film is transformed into a metal thin film by an oxidation or reduction process. The polymer has a hydrophilic functional radical and a hydrophobic functional radical at the same time.
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