| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for polishing a substrate capable of efficiently removing or flattening an excess film forming layer of an embedding film of a silicon oxide film, metal or the like or efficiently flattening an interlayer insulating film at a high level in a recess CMP technique of a shallow trench separate formation, metal embedding wiring formation or the like and a flattening CMP technique of an interlayer insulating film. SOLUTION: The method for polishing the substrate comprises a step of polishing the substrate by an abrasive containing an additive for imparting a point of inflection of polishing pressure dependence to the abrasive and a polishing speed. The method further comprises the steps of polishing the substrate at a speed ratio R2/R1 to R2/R1>=4 until a step between a recess and a protrusion of the substrate becomes 100 nm or less in which a pattern is formed in which a polishing speed of the recess is R1 and a polishing speed of the protrusion is R2, and polishing the substrate at a speed ratio to R1, R2<150 nm/min when the step becomes 100 nm or less at 0<R1<150 nm/min, 0<R2<800 nm/min. Thus, characteristics in which the protrusion can be selectively polished in response to the pattern shape of the film to be polished can be realized. Since the polishing after flattening is almost not advanced, the process management by the polishing time is facilitated. |
