| 摘要 |
<p>PROBLEM TO BE SOLVED: To inhibit the variation of resistance ratio between resistive films by each sensor as little as possible in a flow sensor of thin film type having a thin film structure in which a plurality of patterned resistive films are sandwiched by a pair of insulating films. SOLUTION: In the flow sensor, a lower insulating film, a resistive film and an upper insulating film are in turn laminated on a substrate being cut out from a wafer, and the resistive film is composed of a patterned fluid thermometer 3, a temperature sensing element 4 and a heater 5, and the heater 5 is formed like a shape of wiring where a plurality of resistive elements 5a are connected in parallel. Therefore, the width of wiring of the heater 5 can be made identical to that of the thermometer 3, 4, and the resistance ratio can be made constant independently of the difference of variations of etching in the wafer plane.</p> |
