| 摘要 |
PROBLEM TO BE SOLVED: To prevent generation of leakage current between a contact and a substrate in an element isolation region. SOLUTION: A method for manufacturing a semiconductor device having trench structure element isolation regions on a semiconductor substrate comprises a process for forming a gate electrode in an element forming region adjacent to an element isolation region and forming a first impurity diffusion region for LDD regions, a process for sequentially forming a first insulation film and a second insulation film on the semiconductor substrate, a process for performing an etchback regarding the first insulation film as an etching stopper and forming a first side wall consisting of the second insulation film on the side face of the gate electrode through the first insulation film, a process for performing an etchback all over the surface and etching the first insulation film to form a second side wall consisting of the first insulation film on the side face of the gate electrode, a process for forming second impurity diffusion regions for source/drain region and sequentially forming an interlayer insulation film on the semiconductor substrate, and a process for forming contact holes reaching the second impurity diffusion region.
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